by Prof. Arnab Bhattacharya Professor, Tata Institute of Fundamental Research, Mumbai Director, Homi Bhabha Center for Science Education, Mumbai

Abstract:

Over the last decade, the TIFR group has investigated the synthesis and characterization of range of wide-bandgap semiconductor materials, especially epitaxial layers of the (Al,Ga,In) nitride family, and single crystal of β-Ga2O3.  These have led to interesting insights into non-polar and semi-polar AlGaN and AlInN across the composition range, growth mechanisms of GaN nanowires, synthesis of undoped and transition metal doped β-Ga2O3. A key aspect enabling these studies is the ability to synthesise materials in-house, allowing us access to a range of materials with interesting opto-electronic properties. I will provide an overview of our work in the area of wide-bandgap semiconductor materials.